国家/地区 Sweden（5）
关键词 GRAPHENE（5）
出版物 IEEE ELECTRON DEVIC.（2） IEEE TRANSACTIONS O.（2）
出版时间 2021（2）
机构 CHALMERS UNI.（2）
作者 ASAD M（5）

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

ASAD M, BONMANN M, YANG XX, VOROBIEV A, JEPPSON K, BANSZERUS L, OTTO M, STAMPFER C, NEUMAIER D, STAKE J

Graphene Field-Effect Transistors With High Extrinsic f(T) and f(max)

IEEE ELECTRON DEVICE LETTERS

BONMANN M, ASAD M, YANG XX, GENERALOV A, VOROBIEV A, BANSZERUS L, STAMPFER C, OTTO M, NEUMAIER D, STAKE J

Graphene FET on Diamond for High-Frequency Electronics

IEEE ELECTRON DEVICE LETTERS

ASAD M, MAJDI S, VOROBIEV A, JEPPSON K, ISBERG J, STAKE J

Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JEPPSON K, ASAD M, STAKE J

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J