国家/地区 Vietnam（16）
关键词 GRAPHENE（16）
出版物 DIAMOND RELATED MAT.（3） SUPERLATTICES MICRO.（3）
出版时间 2018（5） 2017（3） 2019（3） 2020（2）
机构 LE QUY DON T.（6） DUY TAN UNIV（3） DONG THAP UN.（2） NGUYEN TAT T.（2）
TON DUC THAN.（2）
作者 HIEU NN（16）

Understanding the electronic properties, contact types and optical performances in graphene/InN heterostructure: Role of electric gating

DIAMOND RELATED MATERIALS

NGUYEN CV, DAO TP, THO TT, HOA L, HIEU NN, PHUC HV, IDREES M, AMIN B, LE PTT

Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field

APPLIED SURFACE SCIENCE

VU TV, HIEU NV, PHUC HV, HIEU NN, BUI HD, IDREES M, AMIN B, NGUYEN CV

Strain and electric field engineering of electronic structures and Schottky contact of layered graphene/Ca(OH)(2) heterostructure

SUPERLATTICES MICROSTRUCTURES

NGUYEN CV, THUAN DV, PHUC HV, HOI BD, HIEU NN, AMIN B, PHAM KD

Tailoring electronic properties and Schottky barrier in sandwich heterostructure based on graphene and tungsten diselenide

DIAMOND RELATED MATERIALS

LE PTT, BUI LM, HIEU NN, PHUC HV, AMIN B, HIEU NV, NGUYEN CV

Opening a band gap in graphene by C-C bond alternation: a tight binding approach

MATERIALS RESEARCH EXPRESS

KHOA DQ, NGUYEN CV, BUI LM, PHUC HV, HOI BD, HIEU NV, NHA VQ, HUYNH N, NHAN LC, HIEU NN

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

VACUUM

PHUC HV, ILYASOV VV, HIEU NN, NGUYEN CV

First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain

SURFACE SCIENCE

PHUC HV, HIEU NN, HOI BD, PHUONG LTT, NGUYEN CV