国家/地区
关键词 GRAPHENE FET（2）
出版物
出版时间
机构
作者 KIM SM（2）

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf0.5Zr0.5O2 Gate Dielectric Using Graphene FETs

ADVANCED ELECTRONIC MATERIALS

HWANG HJ, LEE SK, KIM SM, LEE BH