国家/地区 China（2）
关键词 GRAPHENE FIELDEFFECT TRANSISTORS GFETS（2）
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High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate

CARBON

HE ZZ, YU C, LIU QB, SONG XB, GAO XD, GUO JC, ZHOU CJ, CAI SJ, FENG ZH

Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

IEEE TRANSACTIONS ON DEVICE MATERIALS RELIABILITY

LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY