国家/地区 China（2） Usa（2）
关键词 GRAPHENE NANORIBBON（6）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（6）
出版时间 2011（2） 2021（2）
机构
作者 FIORI G（2） IANNACCONE G（2）

Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness

IEEE TRANSACTIONS ON ELECTRON DEVICES

GOHARRIZI AY, POURFATH M, FATHIPOUR M, KOSINA H

Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons

IEEE TRANSACTIONS ON ELECTRON DEVICES

BETTI A, FIORI G, IANNACCONE G

High-Frequency Behavior of Graphene-Based Interconnects-Part II: Impedance Analysis and Implications for Inductor Design

IEEE TRANSACTIONS ON ELECTRON DEVICES

SARKAR D, XU CA, LI H, BANERJEE K

Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs

IEEE TRANSACTIONS ON ELECTRON DEVICES

YOON Y, FIORI G, HONG S, IANNACCONE G, GUO J

Steep-Slope Transistors Based on Chiral Graphene Nanoribbons With Intrinsic Cold Source

IEEE TRANSACTIONS ON ELECTRON DEVICES

YE SZ, WANG ZF, WANG H, HUANG QJ, HE J, CHANG S

Electronic Fluctuation of Graphene Nanoribbon MOSFETs Under a Full Quantum Dynamics Framework

IEEE TRANSACTIONS ON ELECTRON DEVICES

LV YW, LIU Y, LIAO L, QIN WJ, JIANG CZ