国家/地区 France（2）
关键词 GRAPHENE TRANSISTOR（2）
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High-Frequency Limits of Graphene Field-Effect Transistors with Velocity Saturation

APPLIED SCIENCESBASEL

WILMART Q, BOUKHICHA M, GRAEF H, MELE D, PALOMO J, ROSTICHER M, TANIGUCHI T, WATANABE K, BOUCHIAT V, BAUDIN E, BERROIR JM, BOCQUILLON E, FEVE G, PALLECCHI E, PLACAIS B

Nitrogen-Doped Carbon Quantum Dots on Graphene for Field-Effect Transistor Optoelectronic Memories

ADVANCED ELECTRONIC MATERIALS

CHAUDHARY M, XIN CH, HU ZL, ZHANG DJ, RADTKE G, XU XZ, BILLOT L, TRIPONCANSELIET C, CHEN ZY