国家/地区 Usa（5） China（2）
关键词 HALL MOBILITY（8）
出版物
出版时间 2010（3）
机构
作者 AVOURIS P（2） FREITAG M（2）

Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

MATERIALS RESEARCH EXPRESS

ZHANG XM, YAN CL, ZENG CH, SUN TY, XING Z, SHI WH, WANG YQ, PANG C, ZHANG BS

Study of Implantation Defects in CVD Graphene by Optical and Electrical Methods

APPLIED SCIENCESBASEL

GAWLIK G, CIEPIELEWSKI P, BARANOWSKI JM

Temperature Dependent Electrical Transport Properties of High Carrier Mobility Reduced Graphene Oxide Thin Film Devices

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING

HAQUE A, ABDULLAHAL MAMUN M, TAUFIQUE MFN, KARNATI P, GHOSH K

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC

JOURNAL OF ELECTRONIC MATERIALS

BOLEN ML, SHEN T, GU JJ, COLBY R, STACH EA, YE PD, CAPANO MA

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

DIMITRAKOPOULOS C, LIN YM, GRILL A, FARMER DB, FREITAG M, SUN YN, HAN SJ, CHEN ZH, JENKINS KA, ZHU Y, LIU ZH, MCARDLE TJ, OTT JA, WISNIEFF R, AVOURIS P

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

APPLIED PHYSICS LETTERS

RUBIOROY M, ZAMAN F, HU YK, BERGER C, MOSELEY MW, MEINDL JD, DE HEER WA

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

PHYSICAL REVIEW B

ZHU WJ, PEREBEINOS V, FREITAG M, AVOURIS P