国家/地区 China（2）
关键词 HALL MOBILITY（2）
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Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition

MATERIALS RESEARCH EXPRESS

ZHANG XM, YAN CL, ZENG CH, SUN TY, XING Z, SHI WH, WANG YQ, PANG C, ZHANG BS

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0 degrees and 8 degrees Si-terminated 4H-SiC substrates

CHINESE PHYSICS B

LI J, WANG L, FENG ZH, YU C, LIU QB, DUN SB, CAI SJ