国家/地区 China（2）
关键词 IIIV SEMICONDUCTOR（2）
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Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

AIP ADVANCES

LI Z, KANG JJ, LIU ZQ, DU CX, LEE X, LI X, WANG LC, YI XY, ZHU HW, WANG GH

In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures

APPLIED PHYSICS LETTERS

XU Y, GUO ZD, CHEN HB, YUAN Y, LOU JC, LIN X, GAO HY, CHEN HS, YU B