国家/地区
关键词 INTRINSIC GAIN（2）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（2）
出版时间
机构
作者

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

GANAPATHI K, YOON Y, LUNDSTROM M, SALAHUDDIN S

Analysis of Graphene Tunnel Field-Effect Transistors for Analog/RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

RAWAT B, PAILY R