国家/地区 China（2）
关键词 LIGHTEMITTING DIODE（3）
出版物
出版时间 2015（3）
机构
作者

Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer

SOLIDSTATE ELECTRONICS

WU CC, LIU FY, LIU B, ZHUANG Z, DAI JP, TAO T, ZHANG GG, XIE ZL, WANG XR, ZHANG R

Insights into annealing-induced ohmic contact formation at graphene/p-GaN interface with a NiOx contact layer

JOURNAL OF PHYSICS DAPPLIED PHYSICS

CHANDRAMOHAN S, RYU BD, SEO TH, KIM H, SUH EK, HONG CH

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate

ACS APPLIED MATERIALS INTERFACES

ZHANG L, LI XL, SHAO YL, YU JX, WU YZ, HAO XP, YIN ZM, DAI YB, TIAN Y, HUO Q, SHEN YA, HUA Z, ZHANG BG