国家/地区 Korea（6）
关键词 MAGNETORESISTANCE（6）
出版物
出版时间 2010（2）
机构 SEJONG UNIV（4） SEOUL NATL U.（2）
作者 EOM J（3） PARK YW（2）

Magnetoresistance effect in a vertical spin valve fabricated with a dry-transferred CVD graphene and a resist-free process

MATERIALS RESEARCH EXPRESS

SHARMA PR, GAUTAM P, NAM J, KIM KS, NOH H

Negative Magnetoresistance in a Vertical Single-Layer Graphene Spin Valve at Room Temperature

ACS APPLIED MATERIALS INTERFACES

SINGH AK, EOM J

Spin valve effect of NiFe/graphene/NiFe junctions

NANO RESEARCH

IQBAL MZ, IQBAL MW, LEE JH, KIM YS, CHUN SH, EOM J

Electronic phase coherence and relaxation in graphene field effect transistor

SOLID STATE COMMUNICATIONS

OH Y, EOM J, KOO HC, HAN SH

Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

APPLIED PHYSICS LETTERS

YOO JS, PARK YW, SKAKALOVA V, ROTH S

Magnetoresistance (MR) of twisted bilayer graphene on electron transparent substrate

SYNTHETIC METALS

HONG SJ, RODRIGUEZMANZO JA, KIM KH, PARK M, BAEK SJ, KHOLIN DI, LEE M, CHOI ES, JEONG DH, BONNELL DA, MELE EJ, DRNDIC M, JOHNSON ATC, PARK YW