国家/地区 China（4）
关键词 MEMORY（4）
出版物
出版时间 2014（3）
机构
作者

Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film

NANOTECHNOLOGY

YI MD, CAO Y, LING HF, DU ZZ, WANG LY, YANG T, FAN QL, XIE LH, HUANG W

Resistance-Switchable Graphene Oxide-Polymer Nanocomposites for Molecular Electronics

CHEMELECTROCHEM

LIU G, CHEN Y, LI RW, ZHANG B, KANG ET, WANG C, ZHUANG XD

Formation and carrier transport properties of single-layer graphene/poly (methyl methacrylate) nanocomposite for resistive memory application

VACUUM

WU CX, LI FS, GUO TL

Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers

NANO LETTERS

LI D, CHEN MY, ZONG QJ, ZHANG ZX