国家/地区 China（2）
关键词 MEMORY DEVICE（2）
出版物
出版时间 2019（2）
机构
作者

Improved Resistive Memory Based on ZnO-Graphene Hybrids through Redox Process of Graphene Quantum Dots

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

CHEN T, GAO YJ, CHEN W, ZHAO X

Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices

CARBOHYDRATE POLYMERS

LIU T, WU W, LIAO KN, SUN QJ, GONG XJ, ROY VAL, YU ZZ, LI RKY