国家/地区 Italy（2）
关键词 MOBILITY GAP（3）
出版物 ACS NANO（2）
出版时间
机构 UNIV PISA（2）
作者 CRESTI A（3）

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

MATERIALS

MARCONCINI P, CRESTI A, ROCHE S

Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics

ACS NANO

MARCONCINI P, CRESTI A, TRIOZON F, FIORI G, BIEL B, NIQUET YM, MACUCCI M, ROCHE S

Oxygen Surface Functionalization of Graphene Nanoribbons for Transport Gap Engineering

ACS NANO

CRESTI A, LOPEZBEZANILLA A, ORDEJON P, ROCHE S