国家/地区 China（7）
关键词 MOCVD（7）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2020（2） 2022（2）
机构 XIDIAN UNIV（2）
作者 NING J（5） HAO Y（4） WANG BY（4） WANG D（4）
ZHANG JC（4） JIA YQ（3） YAN CC（3） SHEN X（2）
WU HD（2） ZENG Y（2） ZHANG YC（2）

GaN Films Deposited on Sapphire Substrates Sputter-Coated with AlN Followed by Monolayer Graphene for Solid-State Lighting

ACS APPLIED NANO MATERIALS

NING J, YAN CC, JIA YQ, WANG BY, ZENG Y, ZHANG JC, WANG D, HAO Y

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High-Brightness Violet Light-Emitting Diodes

ADVANCED OPTICAL MATERIALS

JIA YQ, NING J, ZHANG JC, YAN CC, WANG BY, ZHANG YC, ZHU JD, SHEN X, DONG JG, WANG D, HAO Y

In Situ Fabrication of Bendable Microscale Hexagonal Pyramids Array Vertical Light Emitting Diodes with Graphene as Stretchable Electrical Interconnects

ACS PHOTONICS

WANG LC, MA J, LIU ZQ, YI XY, ZHU HW, WANG GH

Remote Epitaxy and Exfoliation of GaN via Graphene

ACS APPLIED ELECTRONIC MATERIALS

HAN X, YU JD, LI ZH, WANG X, HAO ZB, LUO Y, SUN CZ, HAN YJ, XIONG B, WANG J, LI HT, ZHANG YT, DUAN B, NING J, WU HD, WANG L

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

SCIENCE CHINAMATERIALS

CHEN DN, NING J, WANG D, WANG BY, ZHAO JL, ZHANG JC, HAO Y

High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

ACS APPLIED MATERIALS INTERFACES

JIA YQ, NING J, ZHANG JC, WANG BY, YAN CC, ZENG Y, WU HD, ZHANG YC, SHEN X, ZHANG C, GUO HB, WANG D, HAO Y

Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene

ACS APPLIED MATERIALS INTERFACES

QU YP, XU Y, CAO B, WANG YN, WANG JF, SHI L, XU K