国家/地区 Usa（4）
关键词 NANOELECTRONIC（9）
出版物 NANO LETTERS（2）
出版时间 2021（9）
机构
作者

Bottom-Up Synthesized Nanoporous Graphene Transistors

ADVANCED FUNCTIONAL MATERIALS

MUTLU Z, JACOBSE PH, MCCURDY RD, LLINAS JP, LIN YX, VEBER GC, FISCHER FR, CROMMIE MF, BOKOR J

Electrically Induced Dirac Fermions in Graphene Nanoribbons

NANO LETTERS

PIZZOCHERO M, TEPLIAKOV NV, MOSTOFI AA, KAXIRAS E

Electronic Properties of Graphene Nanoribbons With Defects

IEEE TRANSACTIONS ON NANOTECHNOLOGY

RALLIS K, DIMITRAKIS P, KARAFYLLIDIS IG, RUBIO A, SIRAKOULIS GC

Self-Assembled Borophene/Graphene Nanoribbon Mixed-Dimensional Heterostructures

NANO LETTERS

LI QC, LIU XL, AKLILE EB, LI SW, HERSAM MC

In Situ Resistive Switching Effect Scrutinization on Co-Designed Graphene Sensor

SMALL

XIONG F, WANG ZG, BOJESEN ED, XIONG XY, ZHU ZH, DONG MD

Electrically Conductive Networks from Hybrids of Carbon Nanotubes and Graphene Created by Laser Radiation

NANOMATERIALS

GERASIMENKO AY, KUKSIN AV, SHAMAN YP, KITSYUK EP, FEDOROVA YO, SYSA AV, PAVLOV AA, GLUKHOVA OE

Electronic Structure and Transport in Graphene Nanoribbon Heterojunctions under Uniaxial Strain: Implications for Flexible Electronics

ACS APPLIED NANO MATERIALS

TAQIEDDIN A, ALURU NR

Multiple flat bands and topological Hofstadter butterfly in twisted bilayer graphene close to the second magic angle

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LU XB, LIAN BA, CHAUDHARY G, PIOT BA, ROMAGNOLI G, WATANABE K, TANIGUCHI T, POGGIO M, MACDONALD AH, BERNEVIG BA, EFETOV DK

Tunable and sizeable band gaps in strained SiC3/hBN vdW heterostructures: A potential replacement for graphene in future nanoelectronics

COMPUTATIONAL MATERIALS SCIENCE

ULLAH S, DENIS PA, MENEZES MG, SATO F