国家/地区 Iran（6）
关键词 NONEQUILIBRIUM GREEN S FUNCTION NEGF（6）
出版物 SUPERLATTICES MICRO.（3） IEEE TRANSACTIONS O.（2）
出版时间 2016（3）
机构 ISLAMIC AZAD UNIV（6）
作者 FAEZ R（3） DARVISH G（2） DINARVAND A（2）

Role of Biasing and Device Size on Phonon Scattering in Graphene Nanoribbon Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

DINARVAND A

Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure

IEEE TRANSACTIONS ON ELECTRON DEVICES

HORRI A, FAEZ R, POURFATH M, DARVISH G

Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

SUPERLATTICES MICROSTRUCTURES

NAZARI A, FAEZ R, SHAMLOO H

A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

SUPERLATTICES MICROSTRUCTURES

GHOREISHI SS, SAGHAFI K, YOUSEFI R, MORAVVEJFARSHI MK

Asymmetric bilayer graphene nanoribbon MOSFETs for analog and digital electronics

SUPERLATTICES MICROSTRUCTURES

DINARVAND A, AHMADI V, DARVISH G

A novel graphene nanoribbon field effect transistor with two different gate insulators

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ESHKALAK MA, FAEZ R, HAJINASIRI S