国家/地区 Usa（2）
关键词 NONVOLATILE MEMORY（3）
出版物
出版时间 2012（3）
机构
作者 KIM SM（3）

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S