国家/地区 Usa（3）
关键词 NONVOLATILE MEMORY（3）
出版物
出版时间 2012（3）
机构
作者 KIM SM（2） SONG EB（2）

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

NANO LETTERS

ZHANG H, BAO WZ, ZHAO Z, HUANG JW, STANDLEY B, LIU G, WANG FL, KRATZ P, JING L, BOCKRATH M, LAU CN