国家/地区 Korea（6）
关键词 PHOTODETECTOR（6）
出版物 NANOPHOTONICS（2）
出版时间 2021（3）
机构 GWANGJU INST.（2）
作者 CHANG KE（6）

High-Responsivity Near-Infrared Photodetector Using Gate-Modulated Graphene/Germanium Schottky Junction

ADVANCED ELECTRONIC MATERIALS

CHANG KE, KIM C, YOO TJ, KWON MG, HEO S, KIM SY, HYUN Y, YOO JI, KO HC, LEE BH

Gate-Controlled Graphene-Silicon Schottky Junction Photodetector

SMALL

CHANG KE, YOO TJ, KIM C, KIM YJ, LEE SK, KIM SY, HEO S, KWON MG, LEE BH

High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires

NANOMATERIALS

YOO TJ, KIM WS, CHANG KE, KIM C, KWON MG, JO JY, LEE BH

A Facile Method for Improving Detectivity of Graphene/p-Type Silicon Heterojunction Photodetector

LASER PHOTONICS REVIEWS

YOO TJ, KIM SY, KWON MG, KIM C, CHANG KE, HWANG HJ, LEE BH

High-performance near-infrared photodetectors based on gate-controlled graphene-germanium Schottky junction with split active junction

NANOPHOTONICS

KIM C, YOO TJ, KWON MG, CHANG KE, HWANG HJ, LEE BH

Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer

NANOPHOTONICS

KIM C, YOO TJ, CHANG KE, KWON MG, HWANG HJ, LEE BH