国家/地区 Japan（2）
关键词 PN JUNCTION（6）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2016（6）
机构
作者 TANIGUCHI T（2） WATANABE K（2）

Negative differential resistance in new structures based on graphene nanoribbons

JOURNAL OF COMPUTATIONAL ELECTRONICS

SHARIFI M, AKHOUNDI E, ESMAILI H

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

NEUMANN C, RIZZI L, REICHARDT S, TERRES B, KHODKOV T, WATANABE K, TANIGUCHI T, BESCHOTEN B, STAMPFER C

Creating Reversible p-n Junction on Graphene through Ferritin Adsorption

ACS APPLIED MATERIALS INTERFACES

MULYANA Y, UENUMA M, OKAMOTO N, ISHIKAWA Y, YAMASHITA I, URAOKA Y

Characterization of the size and position of electron-hole puddles at a graphene p-n junction

NANOTECHNOLOGY

MILOVANOVIC SP, PEETERS FM

Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures

NANO LETTERS

VELASCO J, JU L, WONG D, KAHN S, LEE J, TSAI HZ, GERMANY C, WICKENBURG S, LU J, TANIGUCHI T, WATANABE K, ZETTL A, WANG F, CROMMIE MF

Gate-Tunable Dirac Point of Molecular Doped Graphene

ACS NANO

SOLISFERNANDEZ P, OKADA S, SATO T, TSUJI M, AGO H