国家/地区 Korea（3） Russia（2）
关键词 QUASIFREESTANDING GRAPHENE（10）
出版物 CARBON（2）
出版时间 2020（3）
机构
作者 KIM H（2） LKHAGVASUREN.（2） SEO JM（2）

Large-scale Growth of Quasifreestanding Graphene by using a Single-step Process

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

KHADKA IB, PARK JH, KIM EH, KIM HW, LEE DH, KIM JW, KIM BJ, AHN JR

Effect of Ag nanoparticles on wafer-scale quasi-free-standing graphene characterization by surface enhanced Raman spectroscopy

MATERIALS RESEARCH EXPRESS

SUN L, JIANG C, CHEN XF, YU FP, ZHAO X, XU XA, XU SC

Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation

FULLERENES NANOTUBES CARBON NANOSTRUCTURES

ELISEYEV IA, SMIRNOV AN, LEBEDEV SP, PANTELEEV VN, DEMENTEV PA, PEZOLDT J, HARTUNG G, KROGER J, ZUBOV AV, LEBEDEV AA

Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation

CARBON

KIM H, DUGERJAV O, LKHAGVASUREN A, SEO JM

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

CARBON

KIM KS, PARK GH, FUKIDOME H, TAKASHI S, TAKUSHI I, FUMIO K, IWAO M, SUEMITSU M

Interaction of graphene with intercalated Al: The process of intercalation and specific features of the electronic structure of the system

SURFACE SCIENCE

RYBKINA AA, RYBKIN AG, FEDOROV AV, USACHOV DY, YACHMENEV ME, MARCHENKO DE, VILKOV OY, NELYUBOV AV, ADAMCHUK VK, SHIKIN AM

Quasi-Free-Standing Epitaxial Graphene on SiC (0001) by Fluorine Intercalation from a Molecular Source

ACS NANO

WONG SL, HUANG H, WANG YZ, CAO L, QI DC, SANTOSO I, CHEN W, WEE ATS

Nanostructural origin of giant Rashba effect in intercalated graphene

2D MATERIALS

KRIVENKOV M, GOLIAS E, MARCHENKO D, SANCHEZBARRIGA J, BIHLMAYER G, RADER O, VARYKHALOV A

SiGe-intercalated graphene on SiC(0001): Interfacial structures and graphene doping depending on coverage and composition ratio of the alloy

APPLIED SURFACE SCIENCE

TUVDENDORJ B, TSOGTBAATAR N, LKHAGVASUREN A, SEO JM, KIM MW, KIM H

Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

APPLIED SCIENCESBASEL

STANISHEV V, ARMAKAVICIUS N, BOUHAFS C, COLETTI C, KUHNE P, IVANOV IG, ZAKHAROV AA, YAKIMOVA R, DARAKCHIEVA V