国家/地区 China（4） Korea（3） Spain（2）
关键词 RESISTIVE RANDOM ACCESS MEMORY（11）
出版物 SEMICONDUCTOR SCIEN.（2）
出版时间 2017（2） 2019（2）
机构 UNIV AUTONOM.（2）
作者

Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer

JAPANESE JOURNAL OF APPLIED PHYSICS

TAO Y, ZHAO P, LI Y, ZHAO XN

Interfacial graphene modulated energetic behavior of the point-defect at the Au/HfO2 interface

APPLIED SURFACE SCIENCE

ZHU LG, ZHANG XY, ZHOU J, SUN ZM

Resistive switching behaviour of multi-stacked PVA/graphene oxide plus PVA composite/PVA insulating layer-based RRAM devices

SEMICONDUCTOR SCIENCE TECHNOLOGY

KIM T, KIM DK, KIM J, PAK JJ

Significantly-enhanced Stabilities in Flexible Hybrid Organic-Inorganic Perovskite Resistive Random Access Memories by Employing Multilayer Graphene Transparent Conductive Electrodes

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

JANG CW, HWANG SW, SHIN SH, CHOI SH

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

NANO LETTERS

TIAN H, CHEN HY, GAO B, YU SM, LIANG JL, YANG Y, XIE D, KANG JF, REN TL, ZHANG YG, WONG HSP

Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D MATERIALS

PAN CB, MIRANDA E, VILLENA MA, XIAO N, JING X, XIE XM, WU TR, HUI F, SHI YY, LANZA M

Resistive switching in graphene-organic device: Charge transport properties of graphene-organic device through electric field induced optical second harmonic generation and charge modulation spectroscopy

CARBON

JACOB MV, TAGUCHI D, IWAMOTO M, BAZAKA K, RAWAT RS

Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for resistive switching memory applications

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

WU Q, CLARAMUNT S, PORTI M, NAFRIA M, AYMERICH X

Graphene oxide-based random access memory: from mechanism, optimization to application

JOURNAL OF PHYSICS DAPPLIED PHYSICS

XIE Y, QI M, XIU XM, YANG JD, REN YY

Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications

SEMICONDUCTOR SCIENCE TECHNOLOGY

SINGH R, KUMAR R, KUMAR A, KUMAR D, KUMAR M