国家/地区 China（4）
关键词 RESISTIVE RANDOM ACCESS MEMORY（4）
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出版时间
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Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer

JAPANESE JOURNAL OF APPLIED PHYSICS

TAO Y, ZHAO P, LI Y, ZHAO XN

Interfacial graphene modulated energetic behavior of the point-defect at the Au/HfO2 interface

APPLIED SURFACE SCIENCE

ZHU LG, ZHANG XY, ZHOU J, SUN ZM

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

NANO LETTERS

TIAN H, CHEN HY, GAO B, YU SM, LIANG JL, YANG Y, XIE D, KANG JF, REN TL, ZHANG YG, WONG HSP

Graphene oxide-based random access memory: from mechanism, optimization to application

JOURNAL OF PHYSICS DAPPLIED PHYSICS

XIE Y, QI M, XIU XM, YANG JD, REN YY