国家/地区 China（2）
关键词 RESISTIVE SWITCHING（2）
出版物
出版时间
机构
作者 CHEN T（2）

Improved Resistive Memory Based on ZnO-Graphene Hybrids through Redox Process of Graphene Quantum Dots

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

CHEN T, GAO YJ, CHEN W, ZHAO X

Flexible Artificial Memristive Synapse Constructed from Solution-Processed MgO-Graphene Oxide Quantum Dot Hybrid Films

ADVANCED ELECTRONIC MATERIALS

CHEN T, YANG SW, WANG J, CHEN W, LIU LF, WANG Y, CHENG SJ, ZHAO X