国家/地区 Taiwan（4）
关键词 RESISTIVE SWITCHING（4）
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出版时间
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Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

INDIAN JOURNAL OF PHYSICS

LIN YJ, WU CL, KE ZY, CHANG HC

Retention behaviour of graphene oxide resistive switching memory

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY

YUAN F, YE YR, LAI CS, WANG JC, ZHANG ZG, PAN LY, XU J

Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects

PROCEEDINGS OF THE IEEE

YANG PK, CHANG WY, TENG PY, JENG SF, LIN SJ, CHIU PW, HE JH

Characteristics of graphene-oxide-based flexible and transparent resistive switching memory

CERAMICS INTERNATIONAL

WU HY, LIN CC, LIN CH