国家/地区 China（3） Usa（2）
关键词 RESISTIVE SWITCHING（6）
出版物
出版时间 2018（6）
机构
作者

Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors

SMALL

ZHAO XN, WANG ZQ, XIE Y, XU HY, ZHU JX, ZHANG XT, LIU WZ, YANG GC, MA JG, LIU YC

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

NANO

LU JG, SUN YM, WEN DZ

In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure

ACS NANO

KIM S, JUNG HJ, KIM JC, LEE KS, PARK SS, DRAVID VP, HE K, JEONG HY

Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices

ORGANIC ELECTRONICS

BHATTACHARJEE S, DAS U, SARKAR PK, ROY A

Single-Crystal Graphene-Directed van der Waals Epitaxial Resistive Switching

ACS APPLIED MATERIALS INTERFACES

SUN X, LU ZH, CHEN ZZ, WANG YP, SHI J, WASHINGTON M, LU TM

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

CHINESE PHYSICS B

LIU HN, SUO XX, ZHANG LA, ZHANG D, WU HC, ZHAO HK, JIANG ZT, LI YL, WANG Z