国家/地区 Sweden（2） Usa（2）
关键词 SATURATION VELOCITY（5）
出版物
出版时间 2011（2）
机构 UNIV ILLINOI.（2）
作者 ASAD M（2） STAKE J（2） VOROBIEV A（2）

w New Analytical Drain Current Model for the Sub-Linear Region of Output Characteristics of Graphene Field-Effect Transistors in the Low Carrier Density Limit

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

LEE D, LEE K, KIM K, KIM O

Scaling of High-Field Transport and Localized Heating in Graphene Transistors

ACS NANO

BAE MH, ISLAM S, DORGAN VE, POP E

Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON NANOTECHNOLOGY

SCOTT BW, LEBURTON JP

Graphene FET on Diamond for High-Frequency Electronics

IEEE ELECTRON DEVICE LETTERS

ASAD M, MAJDI S, VOROBIEV A, JEPPSON K, ISBERG J, STAKE J

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J