国家/地区 China（8） Russia（2）
关键词 SCHOTTKY BARRIER（11）
出版物 APPLIED SURFACE SCI.（2） JOURNAL OF PHYSICS .（2）
出版时间 2021（11）
机构
作者 DAVYDOV SY（2） HU WY（2） HUANG GF（2） HUANG T（2）
HUANG WQ（2） SI Y（2） WU HY（2） XIAO YW（2）
YIN K（2） ZHANG ZG（2）

Tunable Schottky contact in graphene/InP3 van der Waals heterostructures

APPLIED SURFACE SCIENCE

ZHANG DB, HU Y

Schottky barrier modification of GaSSe/graphene heterojunctions based on density functional theory

JOURNAL OF PHYSICS DAPPLIED PHYSICS

LV LL, SHEN YQ, MA YY, GAO X, LIU JJ, WU SY, WANG XY, GONG DW, ZHOU ZX

On the Contact of a Two-Dimensional Transition Metal with a Graphene-Like Compound

PHYSICS OF THE SOLID STATE

DAVYDOV SY

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 van der Waals Heterostructures

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

QIN HL, WANG J, GUO DH, ZHONG DY

Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States

ACS APPLIED MATERIALS INTERFACES

PARK JH, YANG SJ, CHOI CW, CHOI SY, KIM CJ

Model of a "Two-Dimensional Metal-Graphene-Like Compound" Junction: Consideration for Interaction between the Components

SEMICONDUCTORS

DAVYDOV SY, POSREDNIK OV

Effects of Se substitution on the Schottky barrier of a MoS (x) Se(2-x)/graphene heterostructure

JOURNAL OF PHYSICS DAPPLIED PHYSICS

YIN K, HUANG T, WU HY, SI Y, LIAN JC, XIAO YW, ZHANG ZG, HUANG WQ, HU WY, HUANG GF

Tunable Schottky barriers and electronic properties in van der Waals heterostructures of semiconducting monolayer gold sulfides and graphene

APPLIED SURFACE SCIENCE

XUE YF, GAO L, LIU H, REN WN, SHAI XX, WEI TT, TIAN YF, ZENG CH

Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure

COMPUTATIONAL MATERIALS SCIENCE

LU XF, LI LX, GUO X, REN JQ, XUE HT, TANG FL

One-step hydrothermal synthesis of telluride molybdenum/reduced graphene oxide with Schottky barrier for fabricating label-free photoelectrochemical profenofos aptasensor

CHEMICAL ENGINEERING JOURNAL

DING LJ, WEI J, QIU Y, WANG Y, WEN ZR, QIAN J, HAO N, DING CF, LI YQ, WANG K