国家/地区 Usa（6）
关键词 SCHOTTKY JUNCTION（6）
出版物 ACS APPLIED MATERIA.（2） NANO LETTERS（2）
出版时间
机构
作者

Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit

ADVANCED MATERIALS

LAGASSE SW, DHAKRAS P, WATANABE K, TANIGUCHI T, LEE JU

Enhanced Environmental Stability Coupled with a 12.5% Power Conversion Efficiency in an Aluminum Oxide-Encapsulated n-Graphene/p-Silicon Solar Cell

ACS APPLIED MATERIALS INTERFACES

YAVUZ S, LORAN EM, SARKAR N, FENNING DP, BANDARU PR

High Efficiency Graphene Solar Cells by Chemical Doping

NANO LETTERS

MIAO XC, TONGAY S, PETTERSON MK, BERKE K, RINZLER AG, APPLETON BR, HEBARD AF

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

JOURNAL OF PHYSICS DAPPLIED PHYSICS

TOMER D, RAJPUT S, LI L

Enhanced Thermionic-Dominated Photoresponse in Graphene Schottky Junctions

NANO LETTERS

RODRIGUEZNIEVA JF, DRESSELHAUS MS, SONG JCW

Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

ACS APPLIED MATERIALS INTERFACES

VABBINA P, CHOUDHARY N, CHOWDHURY AA, SINHA R, KARABIYIK M, DAS S, CHOI W, PALA N