国家/地区 Usa（2）
关键词 SEMICONDUCTOR DEVICE MODEL（3）
出版物 JOURNAL OF APPLIED .（2）
出版时间 2009（3）
机构
作者

Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study

JOURNAL OF APPLIED PHYSICS

TEONG H, LAM KT, KHALID SB, LIANG GC

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK

Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

JOURNAL OF APPLIED PHYSICS

ZHAO P, GUO J