国家/地区 Iran（4）
关键词 SHORT CHANNEL EFFECT（7）
出版物
出版时间 2016（3）
机构 KERMANSHAH U.（2）
作者 NADERI A（2）

Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

ACS APPLIED MATERIALS INTERFACES

LEE I, KIM JN, KANG WT, SHIN YS, LEE BH, YU WJ

Analytical study of subthreshold behaviour of double gate bilayer graphene field effect transistors

SEMICONDUCTOR SCIENCE TECHNOLOGY

SAEIDMANESH M, KHALEDIAN M, GHADIRY M, ISMAIL R

A novel graphene nanoribbon FET with an extra peak electric field (EFP-GNRFET) for enhancing the electrical performances

PHYSICS LETTERS A

ESHKALAK MA, ANVARIFARD MK

Short channel effects in graphene-based field effect transistors targeting radio-frequency applications

2D MATERIALS

FEIJOO PC, JIMENEZ D, CARTOIXA X

Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions

JOURNAL OF COMPUTATIONAL ELECTRONICS

NADERI A

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

SUPERLATTICES MICROSTRUCTURES

NADERI A

Improving I-on/I-off in dual-gate graphene nanoribbon field-effect transistors using local uniaxial tensile strain

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

MOSLEMI MR, MORAVEJFARSHI MK, SHEIKHI MH