国家/地区 Switzerland（2）
关键词 SILICON CARBIDE SIC（6）
出版物
出版时间
机构 ECOLE POLYTE.（2）
作者 PASQUARELLO .（2） SCLAUZERO G（2）

Modeling and computation of double drift region transit time diode performance based on graphene-SiC

INTERNATIONAL JOURNAL OF NUMERICAL MODELLINGELECTRONIC NETWORKS DEVICES FIELDS

GHIVELA GC, SENGUPTA J

A morphology study on the epitaxial growth of graphene and its buffer layer

THIN SOLID FILMS

KRUSKOPF M, PIERZ K, PAKDEHI DM, WUNDRACK S, STOSCH R, BAKIN A, SCHUMACHER HW

Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles

APPLIED SURFACE SCIENCE

SCLAUZERO G, PASQUARELLO A

Formation of graphene on SiC by chemical vapor deposition with liquid sources

SURFACE COATINGS TECHNOLOGY

KIM JG, KIM WS, KIM YH, LIM CH, CHOI DJ

Low-strain interface models for epitaxial graphene on SiC(0001)

DIAMOND RELATED MATERIALS

SCLAUZERO G, PASQUARELLO A

Non-invasive on-skin sensors for brain machine interfaces with epitaxial graphene

JOURNAL OF NEURAL ENGINEERING

FAISAL SN, AMJADIPOUR M, IZZO K, SINGER JA, BENDAVID A, LIN CT, IACOPI F