国家/地区
关键词 TRANSCONDUCTANCE（3）
出版物
出版时间 2011（3）
机构
作者

Assessment of high-frequency performance limits of graphene field-effect transistors

NANO RESEARCH

CHAUHAN J, GUO J

Top-Gated Graphene Field-Effect Transistors with High Normalized Transconductance and Designable Dirac Point Voltage

ACS NANO

XU HL, ZHANG ZY, XU HT, WANG ZX, WANG S, PENG LM

Temperature dependent transfer characteristics of graphene field effect transistors fabricated using photolithography

CURRENT APPLIED PHYSICS

VENUGOPAL G, KIM SJ