国家/地区 Usa（4）
关键词 TRANSISTOR（4）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2009（4）
机构
作者

Etching of Graphene Devices with a Helium Ion Beam

ACS NANO

LEMME MC, BELL DC, WILLIAMS JR, STERN LA, BAUGHER BWH, JARILLOHERRERO P, MARCUS CM

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, HU M, WONG D, MCGUIRE C, CAMPBELL PM, JERNIGAN G, TEDESCO JL, VANMIL B, MYERSWARD R, EDDY C, GASKILL DK

Behavior of a chemically doped graphene junction

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P