国家/地区 Usa（2）
关键词 TRANSISTOR（3）
出版物 APPLIED PHYSICS LETTERS（3）
出版时间 2009（3）
机构
作者

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Behavior of a chemically doped graphene junction

APPLIED PHYSICS LETTERS

FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P

Logic gates with a single graphene transistor

APPLIED PHYSICS LETTERS

SORDAN R, TRAVERSI F, RUSSO V