国家/地区 India（3）
关键词 TUNNEL FET（3）
出版物 SILICON（2）
出版时间
机构
作者 PAITYA N（3）

InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

SILICON

DUTTA R, SUBASH TD, PAITYA N

Electric Field and Surface Potential Analytical Modeling of Novel Double Gate Triple Material PiN Tunneling Graphene Nano Ribbon FET (DG-TM-PiN-TGNFET)

SILICON

DUTTA R, PAITYA N, SUBASH TD

DC performance analysis of III-V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects

JOURNAL OF COMPUTATIONAL ELECTRONICS

DUTTA R, SUBASH TD, PAITYA N