国家/地区 India（2）
关键词 TUNNEL FET（3）
出版物
出版时间 2021（3）
机构
作者

Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

SOLIDSTATE ELECTRONICS

AVNON A, GOLMAN R, GARZON E, NGO HD, LANUZZA M, TEMAN A

Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon

JOURNAL OF ELECTRONIC MATERIALS

SAMUEL TSA, VENKATESH M, PANDIAN MK, VIMALA P

DC performance analysis of III-V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects

JOURNAL OF COMPUTATIONAL ELECTRONICS

DUTTA R, SUBASH TD, PAITYA N