国家/地区 Australia（11）
关键词 GRAPHENE（4） EPITAXIAL GROWTH（2） SIC（2）
出版物 CARBON（4） NANOTECHNOLOGY（4）
出版时间 2015（3） 2016（3）
机构 QUEENSLAND U.（8）
作者 GUPTA B（11）

Graphene-based supercapacitor electrodes: Addressing challenges in mechanisms and materials

CURRENT OPINION IN GREEN SUSTAINABLE CHEMISTRY

HORN M, GUPTA B, MACLEOD J, LIU JZ, MOTTA N

Sensing performance of reduced graphene oxide-Fe doped WO3 hybrids to NO2 and humidity at room temperature

APPLIED SURFACE SCIENCE

PILOTO C, SHAFIEI M, KHAN H, GUPTA B, TESFAMICHAEL T, MOTTA N

Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N

High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)

NANOTECHNOLOGY

MONDELLI P, GUPTA B, BETTI MG, MARIANI C, DUFFIN JL, MOTTA N

Growth of graphene on cylindrical copper conductors as an anticorrosion coating: a microscopic study

NANOTECHNOLOGY

DATTA AJ, GUPTA B, SHAFIEI M, TAYLOR R, MOTTA N

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

NANOTECHNOLOGY

GUPTA B, DI BERNARDO I, MONDELLI P, DELLA PIA A, BETTI MG, IACOPI F, MARIANI C, MOTTA N

Time evolution of graphene growth on SiC as a function of annealing temperature

CARBON

ZAROTTI F, GUPTA B, IACOPI F, SGARLATA A, TOMELLINI M, MOTTA N

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

NANOTECHNOLOGY

AHMED M, KHAWAJA M, NOTARIANNI M, WANG B, GODING D, GUPTA B, BOECKL JJ, TAKSHI A, MOTTA N, SADDOW SE, IACOPI F

The transition from 3C SiC(111) to graphene captured by Ultra High Vacuum Scanning Tunneling Microscopy

CARBON

GUPTA B, PLACIDI E, HOGAN C, MISHRA N, IACOPI F, MOTTA N

Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV (vol 68, pg 563, 2014)

CARBON

GUPTA B, NOTARIANNI M, MISHRA N, SHAFIEI M, IACOPI F, MOTTA N