国家/地区 Belgium（3）
关键词
出版物
出版时间 2015（2）
机构 IMEC（3）
作者 HEYNS M（3）

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications

NANOTECHNOLOGY

NOURBAKHSH A, AGARWAL TK, KLEKACHEV A, ASSELBERGHS I, CANTORO M, HUYGHEBAERT C, HEYNS M, VERHELST M, THEAN A, DE GENDT S

Deducing the apparent flat-band position V-afb and the doping level of large area single layer graphene MOS capacitors

MICROELECTRONIC ENGINEERING

LIN HCD, ASSELBERGHS I, VAIS A, ARUTCHELVAN G, DELABIE A, HEYNS M, MOCUTA A, RADU I, THEAN A

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

NANOSCALE

NOURBAKHSH A, ADELMANN C, SONG Y, LEE CS, ASSELBERGHS I, HUYGHEBAERT C, BRIZZI S, TALLARIDA M, SCHMEISSER D, VAN ELSHOCHT S, HEYNS M, KONG J, PALACIOS T, DE GENDT S