国家/地区 Brazil（5）
关键词
出版物 PHYSICAL REVIEW B（2）
出版时间 2012（2）
机构 UNIV FED MIN.（4）
作者 SATO K（5）

Using gate-modulated Raman scattering and electron-phonon interactions to probe single-layer graphene: A different approach to assign phonon combination modes

PHYSICAL REVIEW B

MAFRA DL, KONG J, SATO K, SAITO R, DRESSELHAUS MS, ARAUJO PT

Using the G ' Raman Cross-Section To Understand the Phonon Dynamics in Bilayer Graphene Systems

NANO LETTERS

MAFRA DL, KONG J, SATO K, SAITO R, DRESSELHAUS MS, ARAUJO PT

D band Raman intensity calculation in armchair edged graphene nanoribbons

PHYSICAL REVIEW B

BARROS EB, SATO K, SAMSONIDZE GG, SOUZA AG, DRESSELHAUS MS, SAITO R

Raman Excitation Profile of the G-band Enhancement in Twisted Bilayer Graphene

BRAZILIAN JOURNAL OF PHYSICS

ELIEL GSN, RIBEIRO HB, SATO K, SAITO R, LU CC, CHIU PW, FANTINI C, RIGHI A, PIMENTA MA

Origin of van Hove singularities in twisted bilayer graphene

CARBON

RIBEIRO HB, SATO K, ELIEL GSN, DE SOUZA EAT, LU CC, CHIU PW, SAITO R, PIMENTA MA