国家/地区 China（6）
关键词 GRAPHENE（3） ULTRAVIOLET PHOTODE.（2）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2020（2） 2021（2）
机构 CHINESE ACAD.（3）
作者 BEN JW（6）

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

SMALL

JIA YP, SUN XJ, SHI ZM, JIANG K, LIU HN, BEN JW, LI DB

Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

BEN JW, JIA YP, WU T, LIU XK, LI XH

A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene

JOURNAL OF ALLOYS COMPOUNDS

CHEN Y, WU Y, BEN JW, JIANG K, JIA YP, ZHANG SL, ZANG H, SHI ZM, DUAN B, SUN XJ, LI DB

Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector

CARBON

CHEN Y, JIANG K, ZANG H, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, LI DB, SUN XJ