国家/地区 China（4）
关键词
出版物
出版时间
机构 HENAN NORMAL UNIV（4）
作者 JIA Y（4）

Realization of larger band gap opening of graphene and type-I band alignment with BN intercalation layer in graphene/MX2 heterojunctions

PHYSICAL REVIEW B

GAO Q, LI XP, LI M, WANG TX, HUANG XW, ZHANG QM, LI JB, JIA Y, XIA CX

Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides

PHYSICAL REVIEW APPLIED

XIA CX, XIONG WQ, XIAO WB, DU J, FANG LZ, LI JB, JIA Y

Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

CARBON

XIONG WQ, XIA CX, ZHAO X, WANG TX, JIA Y

Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

APPLIED PHYSICS LETTERS

XIA CX, XUE B, WANG TX, PENG YT, JIA Y