国家/地区 China（2）
关键词 DOPING（2）
出版物
出版时间
机构
作者 ZHANG DY（2）

Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering

ADVANCED ELECTRONIC MATERIALS

PENG SG, JIN Z, YAO Y, HUANG XN, ZHANG DY, NIU JB, SHI JY, ZHANG YH, YU GH

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

PHYSICS LETTERS A

DENG XH, WU YQ, DAI JY, KANG DD, ZHANG DY