国家/地区 China（2）
关键词
出版物 APPLIED PHYSICS LETTERS（2）
出版时间
机构 TSINGHUA UNIV（2）
作者 ZHANG JY（2）

Simulation study of channel mobility and device performance dependence on gate stack in graphene field-effect transistors

APPLIED PHYSICS LETTERS

ZHU WN, ZHANG JY, YU ZP

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP