国家/地区 China（2）
关键词
出版物 IEEE ELECTRON DEVICE LETTERS（2）
出版时间
机构
作者 ZHENG L（2）

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH

Si-Based NIR Tunneling Heterojunction Photodetecor With Interfacial Engineering and 3D-Graphene Integration

IEEE ELECTRON DEVICE LETTERS

HE ZY, ZHANG S, ZHENG L, LIU ZD, ZHANG GL, WU HJ, WANG BK, LIU ZY, JIN ZW, WANG G