国家/地区 China（5）
关键词 FIELDEFFECT TRANSISTOR（5）
出版物 ACS APPLIED MATERIALS INTERFACES（5）
出版时间 2016（2）
机构
作者

Reversible Modification of Nitrogen-Doped Graphene Based on Se-N Dynamic Covalent Bonds for Field-Effect Transistors

ACS APPLIED MATERIALS INTERFACES

ZHENG NN, FENG YY, ZHANG Y, LI RJ, BIAN C, BAO LH, DU SX, DONG HL, SHEN YT, FENG W

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

ACS APPLIED MATERIALS INTERFACES

WU Y, ZOU XM, SUN ML, CAO ZY, WANG XR, HUO S, ZHOU JJ, YANG Y, YU XX, KONG YC, YU GH, LIAO L, CHEN TS

Emission-Tunable Multicolor Graphene Molecules with Controllable Synthesis, Excellent Optical Properties, and Specific Applications

ACS APPLIED MATERIALS INTERFACES

YANG JW, HUANG YL, ZHU HY, HUANG W, WANG WZ

Creation of Reduced Graphene Oxide Based Field Effect Transistors and Their Utilization in the Detection and Discrimination of Nucleoside Triphosphates

ACS APPLIED MATERIALS INTERFACES

YU CM, CHANG XM, LIU J, DING LP, PENG JX, FANG Y

Tafel-Kinetics-Controlled High-Speed Switching in a Electrochemical Graphene Field-Effect Transistor

ACS APPLIED MATERIALS INTERFACES

LI SR, YU CL, WANG YC, ZHANG K, JIANG KL, WANG YY, ZHANG JS