国家/地区 China（5）
关键词 HYSTERESI（5）
出版物
出版时间 2013（2）
机构 PEKING UNIV（2）
作者

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

ADVANCED ELECTRONIC MATERIALS

YAO Y, HUANG XN, PENG OG, ZHANG DY, SHI JY, YU GH, LIU Q, JIN Z

Substrate Engineering by Hexagonal Boron Nitride/SiO2 for Hysteresis-Free Graphene FETs and Large-Scale Graphene p-n Junctions

CHEMISTRYAN ASIAN JOURNAL

XU H, WU JX, CHEN YB, ZHANG HL, ZHANG J

Ultraviolet Irradiation-Controlled Memory Effect in Graphene Field-Effect Transistors

SMALL

MENG J, WU HC, CHEN JJ, LIN F, BIE YQ, SHVETS IV, YU DP, LIAO ZM

Study on gas sensing of reduced graphene oxide/ZnO thin film at room temperature

SENSORS ACTUATORS BCHEMICAL

ZHOU Y, LIN XG, WANG Y, LIU GQ, ZHU XY, HUANG YK, GUO YC, GAO C, ZHOU M

Study on the magnetic and hysteresis behaviors in a bilayer graphene-like ring with edge decorated

PHYSICA SCRIPTA

SHI KL, QUAN XW, JIANG W