国家/地区 China（7）
关键词 GRAPHENE（3） PHOTODETECTOR（2）
出版物 JAPANESE JOURNAL OF.（2）
出版时间 2018（2）
机构 FUDAN UNIV（7）
作者 LIU R（7）

Multicolor Broadband and Fast Photodetector Based on InGaAs-Insulator-Graphene Hybrid Heterostructure

ADVANCED ELECTRONIC MATERIALS

CAO GQ, WANG F, PENG M, SHAO XM, YANG B, HU WD, LI X, CHEN J, SHAN YB, WU PS, HU LG, LIU R, GONG HM, CONG CX, QIU ZJ

An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

BAO JR, HU SY, HU GX, HU LG, LIU R, ZHENG LR

Direct laser writing of vertical junctions in graphene oxide films for broad spectral position-sensitive detectors

NANOPHOTONICS

FENG R, HU LG, ZHANG YW, ZAHEER M, QIU ZJ, CONG CX, NIE QM, QIN YJ, LIU R

Laser-scribed highly responsive infrared detectors with semi-reduced graphene oxide

APPLIED PHYSICS EXPRESS

FENG R, ZHANG YW, HU LG, CHEN J, ZAHEER M, QIU ZJ, TIAN PF, CONG CX, NIE QM, JIN W, LIU R

Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD

JOURNAL OF PHYSICS DAPPLIED PHYSICS

ZHANG YW, QIU ZJ, CHENG XH, XIE H, WANG HM, XIE XM, YU YH, LIU R

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

Quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

HU SY, HU GX, WANG LL, LIU R, ZHENG LR